ZXTDA1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

280mV

Current - Collector (Ic) (Max) :

4.5A 4A

Collector Emitter Saturation Voltage :

240mV

Transistor Type :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Transition Frequency :

120MHz

Frequency - Transition :

120MHz 110MHz

JESD-30 Code :

R-PQFP-F10

Max Power Dissipation :

1W

Continuous Collector Current :

-4A

Transistor Element Material :

SILICON

Frequency :

120MHz

Published :

2002

Terminal Position :

QUAD

Emitter Base Voltage (VEBO) :

7.5V

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Number of Pins :

832

Max Breakdown Voltage :

12V

Power Dissipation :

3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2mm

JESD-609 Code :

e3

Base Part Number :

ZXTDA1M832

Package / Case :

8-VDFN Exposed Pad

Collector Emitter Breakdown Voltage :

12V

Pin Count :

10

Max Collector Current :

4A

Number of Terminations :

10

Voltage - Collector Emitter Breakdown (Max) :

15V 12V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 3A 2V / 180 @ 2.5A 2V

Element Configuration :

Dual

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A

Current - Collector Cutoff (Max) :

25nA

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

20V

Polarity :

NPN, PNP

Terminal Finish :

Matte Tin (Sn)

Gain Bandwidth Product :

120MHz