ZXTDA1M832TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

ZXTDA1M832

Published :

2002

Polarity :

NPN, PNP

JESD-30 Code :

R-PQFP-F10

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-4A

Width :

2mm

Frequency :

120MHz

Terminal Form :

Flat

Gain Bandwidth Product :

120MHz

Mount :

Surface Mount

Number of Elements :

2

Qualification Status :

Not Qualified

Number of Terminations :

10

Current - Collector (Ic) (Max) :

4.5A 4A

Voltage - Collector Emitter Breakdown (Max) :

15V 12V

Transition Frequency :

120MHz

Max Breakdown Voltage :

12V

Transistor Type :

NPN, PNP

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

832

Element Configuration :

Dual

Length :

3mm

Collector Emitter Saturation Voltage :

240mV

Pin Count :

10

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

7.5V

Collector Base Voltage (VCBO) :

20V

JESD-609 Code :

e3

Terminal Position :

QUAD

Max Collector Current :

4A

Vce Saturation (Max) @ Ib, Ic :

280mV @ 50mA, 4.5A / 300mV @ 150mA, 4A

Frequency - Transition :

120MHz 110MHz

Mounting Type :

Surface Mount

Max Power Dissipation :

1W

Collector Emitter Voltage (VCEO) :

280mV

Transistor Application :

SWITCHING

Power Dissipation :

3W

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 3A 2V / 180 @ 2.5A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

25nA

Height :

1mm

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

12V

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Package / Case :

8-VDFN Exposed Pad

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260