ZXTD718MCTA
- Mfr.Part #
- ZXTD718MCTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-VDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS 2PNP 20V 3.5A 8DFN
- Stock
- 389
- In Stock :
- 389
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Surface Mount
- Transition Frequency :
- 180MHz
- Collector Base Voltage (VCBO) :
- 25V
- JESD-609 Code :
- e4
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Published :
- 2011
- Number of Pins :
- 8
- Collector Emitter Saturation Voltage :
- -19mV
- Transistor Type :
- 2 PNP (Dual)
- REACH SVHC :
- No SVHC
- Package / Case :
- 8-VDFN Exposed Pad
- Max Power Dissipation :
- 2.45W
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 350mA, 3.5A
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 20V
- Radiation Hardening :
- No
- Number of Elements :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Emitter Base Voltage (VEBO) :
- -7V
- Factory Lead Time :
- 16 Weeks
- Element Configuration :
- Dual
- Transistor Element Material :
- SILICON
- Power - Max :
- 1.7W
- Gain Bandwidth Product :
- 180MHz
- Power Dissipation :
- 2.45W
- Frequency - Transition :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 20V
- Datasheets
- ZXTD718MCTA

ZXTD718MCTA datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Diodes Incorporated stock available at
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