ZXTD718MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

8

Max Collector Current :

3.5A

Polarity :

PNP

Transistor Element Material :

SILICON

Published :

2011

Emitter Base Voltage (VEBO) :

-7V

Frequency - Transition :

150MHz

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

20V

Collector Emitter Saturation Voltage :

-19mV

Transition Frequency :

180MHz

Mounting Type :

Surface Mount

Gain Bandwidth Product :

180MHz

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

20V

Factory Lead Time :

16 Weeks

Frequency :

180MHz

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power - Max :

1.7W

Transistor Type :

2 PNP (Dual)

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 350mA, 3.5A

JESD-609 Code :

e4

Current - Collector Cutoff (Max) :

100nA

Number of Pins :

8

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Power Dissipation :

2.45W

Collector Emitter Voltage (VCEO) :

20V

Package / Case :

8-VDFN Exposed Pad

Max Power Dissipation :

2.45W