ZTX857STOA
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- Mfr.Part #
- ZTX857STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 3A E-LINE
- Stock
- 2,881
- In Stock ：
- 2,881
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 330V
- Package / Case :
- E-Line-3
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 300V
- Pin Count :
- 3
- Max Power Dissipation :
- 1.2W
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 80MHz
- Continuous Collector Current :
- 3A
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 3A
- HTS Code :
- 8541.29.00.75
- Weight :
- 453.59237mg
- Current Rating :
- 5A
- Length :
- 4.77mm
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Max Collector Current :
- 3A
- JESD-30 Code :
- R-PSIP-W3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~200°C TJ
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 80MHz
- Width :
- 2.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- ZTX857
- Datasheets
- ZTX857STOA
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Reel (TR) Through Hole
ZTX857STOA Overview
In this device, the DC current gain is 100 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 600mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZTX857STOA Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857STOA Applications
There are a lot of Diodes Incorporated
ZTX857STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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