ZTX576

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Mfr.Part #
ZTX576
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS PNP 200V 1A E-LINE
Stock
11,102
In Stock :
11,102

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
100MHz
Transistor Type :
PNP
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
300mV
Width :
2.41mm
RoHS Status :
RoHS Compliant
Height :
4.01mm
Reach Compliance Code :
Unknown
Emitter Base Voltage (VEBO) :
-5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
HTS Code :
8541.29.00.75
Mount :
Through Hole
Weight :
453.59237mg
Number of Terminations :
3
Transistor Element Material :
SILICON
Max Power Dissipation :
1W
Max Collector Current :
1A
Voltage - Rated DC :
-200V
Polarity/Channel Type :
PNP
JESD-30 Code :
R-PSIP-W3
ECCN Code :
EAR99
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
-200V
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 300mA 10V
Element Configuration :
Single
Qualification Status :
Not Qualified
Package / Case :
E-Line-3
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage :
200V
Current - Collector (Ic) (Max) :
1A
Pin Count :
3
Length :
4.77mm
Gain Bandwidth Product :
100MHz
Current Rating :
-1A
Base Part Number :
ZTX576
Operating Temperature :
-55°C~200°C TJ
Terminal Form :
Wire
Continuous Collector Current :
-1A
Current - Collector Cutoff (Max) :
100nA ICBO
Datasheets
ZTX576
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX576 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:E-Line-3, Base Part Number:ZTX576, Operating Temperature:-55°C~200°C TJ, ZTX576 pinout, ZTX576 datasheet PDF, ZTX576 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX576 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX576


PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole

ZTX576 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 300mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.Collector current can be as low as 1A volts at its maximum.

ZTX576 Features


the DC current gain for this device is 50 @ 300mA 10V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz


ZTX576 Applications


There are a lot of Diodes Incorporated
ZTX576 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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