ZTX550
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- Mfr.Part #
- ZTX550
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A E-LINE
- Stock
- 11,421
- In Stock ：
- 11,421
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Power Dissipation :
- 1W
- Height :
- 4.01mm
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Published :
- 2006
- ECCN Code :
- EAR99
- Package / Case :
- E-Line-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Mount :
- Through Hole
- Weight :
- 453.59237mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- -1A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~200°C TJ
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Pin Count :
- 3
- Width :
- 2.41mm
- Factory Lead Time :
- 15 Weeks
- Length :
- 4.77mm
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Voltage - Rated DC :
- -45V
- Terminal Form :
- Wire
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Frequency :
- 150MHz
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- -1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZTX550
- Transition Frequency :
- 150MHz
- Datasheets
- ZTX550
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX550 Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 15mA, 150mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 150MHz.In extreme cases, the collector current can be as low as 1A volts.
ZTX550 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX550 Applications
There are a lot of Diodes Incorporated
ZTX550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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