ZTX553
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- Mfr.Part #
- ZTX553
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A E-LINE
- Stock
- 97,003
- In Stock ：
- 97,003
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZTX553
- Frequency :
- 150MHz
- Package / Case :
- E-Line-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- -1A
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1W
- Published :
- 2006
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~200°C TJ
- Max Collector Current :
- 1A
- Current Rating :
- -1A
- Height :
- 4.01mm
- JEDEC-95 Code :
- TO-92
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -100V
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Weight :
- 453.59237mg
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Bulk
- Length :
- 4.77mm
- Transistor Element Material :
- SILICON
- Width :
- 2.41mm
- Transition Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 120V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZTX553
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX553 Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX553 Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX553 Applications
There are a lot of Diodes Incorporated
ZTX553 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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