ZTX549STZ
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- Mfr.Part #
- ZTX549STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A E-LINE
- Stock
- 21,446
- In Stock ：
- 21,446
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- -25V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Box (TB)
- Published :
- 2006
- Transistor Type :
- PNP
- Height :
- 4.95mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 2A
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.29.00.75
- Collector Emitter Saturation Voltage :
- -500mV
- Gain Bandwidth Product :
- 100MHz
- Mounting Type :
- Through Hole
- Width :
- 3.94mm
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Base Part Number :
- ZTX549
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- E-Line-3, Formed Leads
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Current Rating :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- -35V
- Pin Count :
- 3
- Continuous Collector Current :
- -1A
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Current - Collector (Ic) (Max) :
- 1A
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 750mV
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- Length :
- 4.95mm
- Factory Lead Time :
- 15 Weeks
- Weight :
- 453.59237mg
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~200°C TJ
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Datasheets
- ZTX549STZ
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX549STZ Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 200mA, 2A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).100MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
ZTX549STZ Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
ZTX549STZ Applications
There are a lot of Diodes Incorporated
ZTX549STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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