ZTX551
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- Mfr.Part #
- ZTX551
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A E-LINE
- Stock
- 12,945
- In Stock ：
- 12,945
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- Voltage - Rated DC :
- -60V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- -350mV
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 15mA, 150mA
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- ZTX551
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 10V
- REACH SVHC :
- No SVHC
- Width :
- 2.41mm
- Pin Count :
- 3
- Transition Frequency :
- 150MHz
- Max Collector Current :
- 1A
- Frequency :
- 150MHz
- Published :
- 2006
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -1A
- Pbfree Code :
- yes
- Height :
- 4.01mm
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Weight :
- 453.59237mg
- Operating Temperature :
- -55°C~200°C TJ
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 4.77mm
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- PNP
- JEDEC-95 Code :
- TO-92
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 150MHz
- JESD-609 Code :
- e3
- Package / Case :
- E-Line-3
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Datasheets
- ZTX551
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX551 Overview
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.A VCE saturation (Max) of 350mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
ZTX551 Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX551 Applications
There are a lot of Diodes Incorporated
ZTX551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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