ZTX551
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- Mfr.Part #
- ZTX551
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A E-LINE
- Stock
- 12,945
- In Stock ：
- 12,945
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- ZTX551
- Collector Emitter Saturation Voltage :
- -350mV
- Package / Case :
- E-Line-3
- Number of Elements :
- 1
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Through Hole
- Pin Count :
- 3
- Packaging :
- Bulk
- Continuous Collector Current :
- -1A
- JEDEC-95 Code :
- TO-92
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 10V
- Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -60V
- Width :
- 2.41mm
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Wire
- Weight :
- 453.59237mg
- Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Current Rating :
- -1A
- Length :
- 4.77mm
- Gain Bandwidth Product :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 15mA, 150mA
- Published :
- 2006
- Height :
- 4.01mm
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZTX551
ZTX551 Documents
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX551 Overview
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.A VCE saturation (Max) of 350mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
ZTX551 Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX551 Applications
There are a lot of Diodes Incorporated
ZTX551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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