ZTX551
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- Mfr.Part #
- ZTX551
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A E-LINE
- Stock
- 12,945
- In Stock ：
- 12,945
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Radiation Hardening :
- No
- Package / Case :
- E-Line-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Length :
- 4.77mm
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 15mA, 150mA
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 150mA 10V
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Frequency :
- 150MHz
- Current Rating :
- -1A
- Collector Emitter Saturation Voltage :
- -350mV
- JEDEC-95 Code :
- TO-92
- Pin Count :
- 3
- Width :
- 2.41mm
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2006
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 1A
- Height :
- 4.01mm
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Continuous Collector Current :
- -1A
- Weight :
- 453.59237mg
- Packaging :
- Bulk
- Base Part Number :
- ZTX551
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~200°C TJ
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -60V
- Datasheets
- ZTX551
ZTX551 Documents
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX551 Overview
This device has a DC current gain of 50 @ 150mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -350mV.A VCE saturation (Max) of 350mV @ 15mA, 150mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 1A volts is possible.
ZTX551 Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX551 Applications
There are a lot of Diodes Incorporated
ZTX551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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