ZTX550STZ
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- Mfr.Part #
- ZTX550STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A E-LINE
- Stock
- 2,113
- In Stock ：
- 2,113
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 150MHz
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- -1A
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- Current Rating :
- -1A
- Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.41mm
- Transistor Type :
- PNP
- Power Dissipation :
- 1W
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- E-Line-3, Formed Leads
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- ZTX550
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 1W
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -250mV
- Length :
- 4.77mm
- Voltage - Rated DC :
- -45V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Mount :
- Through Hole
- Weight :
- 453.59237mg
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 4.01mm
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- ZTX550STZ
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX550STZ Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX550STZ Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX550STZ Applications
There are a lot of Diodes Incorporated
ZTX550STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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