ZTX550STZ
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- Mfr.Part #
- ZTX550STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A E-LINE
- Stock
- 2,113
- In Stock ：
- 2,113
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Length :
- 4.77mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 150MHz
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2001
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- -250mV
- Number of Pins :
- 3
- Package / Case :
- E-Line-3, Formed Leads
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Collector Current :
- -1A
- Pin Count :
- 3
- Base Part Number :
- ZTX550
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Current Rating :
- -1A
- Operating Temperature :
- -55°C~200°C TJ
- Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.41mm
- Height :
- 4.01mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Gain Bandwidth Product :
- 150MHz
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Weight :
- 453.59237mg
- Max Collector Current :
- 1A
- Datasheets
- ZTX550STZ
ZTX550STZ Documents
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX550STZ Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX550STZ Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX550STZ Applications
There are a lot of Diodes Incorporated
ZTX550STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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