ZTX550STZ
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- Mfr.Part #
- ZTX550STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A E-LINE
- Stock
- 2,113
- In Stock ：
- 2,113
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -45V
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- -250mV
- Pin Count :
- 3
- Radiation Hardening :
- No
- Weight :
- 453.59237mg
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -1A
- Base Part Number :
- ZTX550
- Height :
- 4.01mm
- Pbfree Code :
- yes
- Published :
- 2001
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~200°C TJ
- Package / Case :
- E-Line-3, Formed Leads
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Box (TB)
- REACH SVHC :
- No SVHC
- Width :
- 2.41mm
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Factory Lead Time :
- 15 Weeks
- Terminal Form :
- Wire
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Datasheets
- ZTX550STZ
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX550STZ Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 15mA, 150mA.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
ZTX550STZ Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX550STZ Applications
There are a lot of Diodes Incorporated
ZTX550STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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