ZTX553STOA
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- Mfr.Part #
- ZTX553STOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A E-LINE
- Stock
- 24,948
- In Stock ：
- 24,948
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- -120V
- Transition Frequency :
- 150MHz
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Voltage - Rated DC :
- -100V
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Width :
- 2.41mm
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Length :
- 4.77mm
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Continuous Collector Current :
- -1A
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Weight :
- 453.59237mg
- Pin Count :
- 3
- HTS Code :
- 8541.29.00.75
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 15mA, 150mA
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Saturation Voltage :
- -300mV
- Mounting Type :
- Through Hole
- Height :
- 4.01mm
- Package / Case :
- E-Line-3, Formed Leads
- Base Part Number :
- ZTX553
- JESD-30 Code :
- R-PSIP-W3
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 250mV
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZTX553STOA
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX553STOA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 10V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -1A for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 150MHz.A maximum collector current of 1A volts can be achieved.
ZTX553STOA Features
the DC current gain for this device is 40 @ 150mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 250mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
ZTX553STOA Applications
There are a lot of Diodes Incorporated
ZTX553STOA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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