ZTX558STZ
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- Mfr.Part #
- ZTX558STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.2A E-LINE
- Stock
- 1,550
- In Stock ：
- 1,550
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Transistor Application :
- SWITCHING
- Length :
- 4.77mm
- Package / Case :
- E-Line-3, Formed Leads
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 400V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -200mA
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Operating Temperature :
- -55°C~200°C TJ
- REACH SVHC :
- No SVHC
- Weight :
- 453.59237mg
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- -5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.41mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Height :
- 4.01mm
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Base Part Number :
- ZTX558
- Number of Terminations :
- 3
- Max Collector Current :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 400V
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -200mA
- Number of Pins :
- 3
- Voltage - Rated DC :
- -400V
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -500mV
- Published :
- 2006
- Mount :
- Through Hole
- Power Dissipation :
- 1W
- Datasheets
- ZTX558STZ
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PNP -55°C~200°C TJ 100nA 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX558STZ Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at -200mA in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
ZTX558STZ Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
ZTX558STZ Applications
There are a lot of Diodes Incorporated
ZTX558STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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