ZTX555
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- Mfr.Part #
- ZTX555
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 1A E-LINE
- Stock
- 23,534
- In Stock ：
- 23,534
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.29.00.75
- Transistor Element Material :
- SILICON
- Package / Case :
- E-Line-3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 300mV
- Packaging :
- Bulk
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 300mA 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 150V
- RoHS Status :
- RoHS Compliant
- Continuous Collector Current :
- -1A
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- -1A
- Width :
- 2.41mm
- Weight :
- 453.59237mg
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -150V
- Base Part Number :
- ZTX555
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-W3
- Qualification Status :
- Not Qualified
- Length :
- 4.77mm
- Collector Emitter Saturation Voltage :
- -300mV
- Collector Base Voltage (VCBO) :
- -160V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2006
- Pin Count :
- 3
- Mount :
- Through Hole
- Max Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Element Configuration :
- Single
- Height :
- 4.01mm
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- ZTX555
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX555 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 300mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ZTX555 Features
the DC current gain for this device is 50 @ 300mA 10V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
ZTX555 Applications
There are a lot of Diodes Incorporated
ZTX555 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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