TK8A65D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Packaging :

Bulk

Package / Case :

TO-220-3 Full Pack

Rise Time :

22ns

Power Dissipation :

45W

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Rds On Max :

840 mΩ

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

840mOhm @ 4A, 10V

Series :

π-MOSVII

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Fall Time (Typ) :

15 ns

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 1mA

Mount :

Through Hole

Published :

2004

Number of Elements :

1

Radiation Hardening :

No

Power Dissipation-Max :

45W Tc

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Temperature :

150°C TJ

Input Capacitance :

1.35nF

FET Type :

N-Channel

Supplier Device Package :

TO-220SIS

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Number of Pins :

3