TK8A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

40W Tc

Drain to Source Voltage (Vdss) :

500V

Avalanche Energy Rating (Eas) :

165 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

500V

Series :

π-MOSVII

Published :

2010

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

850m Ω @ 4A, 10V

Number of Terminations :

3

Number of Pins :

3

Factory Lead Time :

16 Weeks

Rise Time :

20ns

Drain-source On Resistance-Max :

0.85Ohm

Number of Elements :

1

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

8A

Case Connection :

Isolated

Mount :

Through Hole

Mounting Type :

Through Hole

Radiation Hardening :

No