TK8A55DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Mount :

Through Hole

Operating Temperature :

150°C TJ

Series :

π-MOSVII

Rds On Max :

1.07 Ω

Max Operating Temperature :

150°C

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Published :

2010

Rds On (Max) @ Id, Vgs :

1.07Ohm @ 3.8A, 10V

Continuous Drain Current (ID) :

7.5A

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

550V

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Fall Time (Typ) :

12 ns

Supplier Device Package :

TO-220SIS

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Power Dissipation-Max :

40W Tc

Number of Pins :

3

Rise Time :

20ns

Input Capacitance :

800pF