TK8A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Power Dissipation :

30W

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

500mOhm @ 4A, 10V

Packaging :

Tube

Input Capacitance :

570pF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Element Configuration :

Single

Rds On Max :

500 mΩ

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Series :

DTMOSIV

Turn-Off Delay Time :

70 ns

Fall Time (Typ) :

5.5 ns

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

18.5nC @ 10V

FET Feature :

Super Junction

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Drain to Source Resistance :

420mOhm

Rise Time :

20ns

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 300V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Supplier Device Package :

TO-220SIS

Vgs(th) (Max) @ Id :

3.7V @ 400μA

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

30W Tc

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Drain to Source Breakdown Voltage :

600V

Capacitance :

570pF