TK8A45D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

35W Tc

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-220SIS

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

8A

Current - Continuous Drain (Id) @ 25°C :

8A Ta

Rds On (Max) @ Id, Vgs :

900mOhm @ 4A, 10V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Input Capacitance :

700pF

Packaging :

Tube

FET Type :

N-Channel

Vgs (Max) :

±30V

Published :

2011

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

900 mΩ

Series :

π-MOSVII

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Number of Pins :

3

Drain to Source Voltage (Vdss) :

450V

Package / Case :

TO-220-3 Full Pack