TK8A50DA(STA4,Q,M)
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- Mfr.Part #
- TK8A50DA(STA4,Q,M)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7.5A TO220SIS
- Stock
- 12,827
- In Stock ：
- 12,827
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 11 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Power Dissipation-Max :
- 35W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 700pF @ 25V
- Continuous Drain Current (ID) :
- 7.5A
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 60 ns
- Mounting Type :
- Through Hole
- Series :
- π-MOSVII
- Rise Time :
- 20ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 1.04 Ω @ 3.8A, 10V
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 4.4V @ 1mA
- Packaging :
- Tube
- Power Dissipation :
- 35W
- Drain to Source Breakdown Voltage :
- 500V
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 7.5A Ta
- Published :
- 2010
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- TK8A50DA(STA4,Q,M)
N-Channel Tube 1.04 Ω @ 3.8A, 10V ±30V 700pF @ 25V 16nC @ 10V TO-220-3 Full Pack
TK8A50DA(STA4,Q,M) Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
TK8A50DA(STA4,Q,M) Features
a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
TK8A50DA(STA4,Q,M) Applications
There are a lot of Toshiba Semiconductor and Storage
TK8A50DA(STA4,Q,M) applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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