TK8A60DA(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

150°C TJ

Rds On Max :

1 Ω

Rise Time :

25ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

1Ohm @ 4A, 10V

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Supplier Device Package :

TO-220SIS

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Number of Pins :

3

Drain to Source Voltage (Vdss) :

600V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Series :

π-MOSVII

Vgs (Max) :

±30V

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Power Dissipation-Max :

45W Tc

Continuous Drain Current (ID) :

7.5A

Packaging :

Tube

Input Capacitance :

1.05nF

Package / Case :

TO-220-3 Full Pack