TK31V60X,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

3.5V @ 1.5mA

Number of Channels :

1

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

98m Ω @ 9.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Turn On Delay Time :

55 ns

Drain-source On Resistance-Max :

0.098Ohm

Number of Elements :

1

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Package / Case :

4-VSFN Exposed Pad

Fall Time (Typ) :

6 ns

Terminal Form :

NO LEAD

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

Super Junction

Weight :

37.393021mg

Turn-Off Delay Time :

130 ns

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

22ns

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 300V

Packaging :

Cut Tape (CT)

Avalanche Energy Rating (Eas) :

338 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

30.8A Ta

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

JESD-30 Code :

S-PSSO-N4

Vgs (Max) :

±30V

Number of Terminations :

4

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

240W Tc

Operating Temperature :

150°C TJ

DS Breakdown Voltage-Min :

600V

Published :

2014

Continuous Drain Current (ID) :

30.8A

FET Type :

N-Channel

Series :

DTMOSIV-H