TK31E60X,S1X
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- Mfr.Part #
- TK31E60X,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO220
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 55 ns
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 130 ns
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 9.4A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.5mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Mount :
- Through Hole
- Number of Channels :
- 1
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Weight :
- 6.000006g
- FET Type :
- N-Channel
- Power Dissipation :
- 230W
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 19.95mm
- Factory Lead Time :
- 16 Weeks
- Rise Time :
- 22ns
- Continuous Drain Current (ID) :
- 30.8A
- FET Feature :
- Super Junction
- Power Dissipation-Max :
- 230W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Fall Time (Typ) :
- 6 ns
- Packaging :
- Tube
- Series :
- DTMOSIV-H
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Datasheets
- TK31E60X,S1X
N-Channel Tube 88m Ω @ 9.4A, 10V ±30V 3000pF @ 300V 65nC @ 10V TO-220-3
TK31E60X,S1X Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 300V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
TK31E60X,S1X Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 130 ns
TK31E60X,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK31E60X,S1X applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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