TK31E60X,S1X
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- Mfr.Part #
- TK31E60X,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO220
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.5mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Power Dissipation-Max :
- 230W Tc
- Turn-Off Delay Time :
- 130 ns
- Mount :
- Through Hole
- Packaging :
- Tube
- FET Feature :
- Super Junction
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Weight :
- 6.000006g
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 19.95mm
- Published :
- 2014
- Rise Time :
- 22ns
- Power Dissipation :
- 230W
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Series :
- DTMOSIV-H
- Turn On Delay Time :
- 55 ns
- Fall Time (Typ) :
- 6 ns
- Operating Temperature :
- 150°C TJ
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 9.4A, 10V
- Continuous Drain Current (ID) :
- 30.8A
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3
- Datasheets
- TK31E60X,S1X
N-Channel Tube 88m Ω @ 9.4A, 10V ±30V 3000pF @ 300V 65nC @ 10V TO-220-3
TK31E60X,S1X Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 300V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 55 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
TK31E60X,S1X Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 130 ns
TK31E60X,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK31E60X,S1X applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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