TK31J60W,S1VQ
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- Mfr.Part #
- TK31J60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO3P
- Stock
- 15,125
- In Stock ：
- 15,125
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Capacitance :
- 3nF
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- FET Feature :
- Super Junction
- Rds On Max :
- 88 mΩ
- Series :
- DTMOSIV
- Mount :
- Through Hole
- Supplier Device Package :
- TO-3P(N)
- Power Dissipation :
- 230W
- Operating Temperature :
- 150°C TJ
- Drain to Source Resistance :
- 88mOhm
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Package / Case :
- TO-3P-3, SC-65-3
- Factory Lead Time :
- 16 Weeks
- Drain to Source Breakdown Voltage :
- 600V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.5mA
- Power Dissipation-Max :
- 230W Tc
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 88mOhm @ 15.4A, 10V
- Input Capacitance :
- 3nF
- Continuous Drain Current (ID) :
- 30.8A
- Datasheets
- TK31J60W,S1VQ
N-Channel Tube 88mOhm @ 15.4A, 10V ±30V 3000pF @ 300V 86nC @ 10V 600V TO-3P-3, SC-65-3
TK31J60W,S1VQ Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3000pF @ 300V.This device conducts a continuous drain current (ID) of 30.8A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 88mOhm, which means the device is not biased.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK31J60W,S1VQ Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
single MOSFETs transistor is 88mOhm
a 600V drain to source voltage (Vdss)
TK31J60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK31J60W,S1VQ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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