TK31J60W,S1VQ
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- Mfr.Part #
- TK31J60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO3P
- Stock
- 15,125
- In Stock ：
- 15,125
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Published :
- 2012
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Operating Temperature :
- 150°C TJ
- Rds On Max :
- 88 mΩ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Resistance :
- 88mOhm
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-3P-3, SC-65-3
- Input Capacitance :
- 3nF
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.5mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Power Dissipation :
- 230W
- Factory Lead Time :
- 16 Weeks
- Supplier Device Package :
- TO-3P(N)
- Continuous Drain Current (ID) :
- 30.8A
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 88mOhm @ 15.4A, 10V
- Series :
- DTMOSIV
- Power Dissipation-Max :
- 230W Tc
- Capacitance :
- 3nF
- Datasheets
- TK31J60W,S1VQ
N-Channel Tube 88mOhm @ 15.4A, 10V ±30V 3000pF @ 300V 86nC @ 10V 600V TO-3P-3, SC-65-3
TK31J60W,S1VQ Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3000pF @ 300V.This device conducts a continuous drain current (ID) of 30.8A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 88mOhm, which means the device is not biased.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK31J60W,S1VQ Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
single MOSFETs transistor is 88mOhm
a 600V drain to source voltage (Vdss)
TK31J60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK31J60W,S1VQ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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