TK31V60W,LVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

98mOhm @ 15.4A, 10V

Input Capacitance :

3nF

Continuous Drain Current (ID) :

30.8A

Min Operating Temperature :

-55°C

Turn On Delay Time :

70 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 300V

Drain to Source Voltage (Vdss) :

600V

Published :

2014

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8.5 ns

Current - Continuous Drain (Id) @ 25°C :

30.8A Ta

Number of Pins :

5

Package / Case :

4-VSFN Exposed Pad

Supplier Device Package :

4-DFN-EP (8x8)

FET Feature :

Super Junction

Series :

DTMOSIV

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Rds On Max :

98 mΩ

Drain to Source Resistance :

78mOhm

Element Configuration :

Single

Operating Temperature :

150°C TJ

Power Dissipation-Max :

240W Tc

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Number of Channels :

1

Vgs(th) (Max) @ Id :

3.7V @ 1.5mA

Rise Time :

32ns

Turn-Off Delay Time :

165 ns

RoHS Status :

RoHS Compliant

FET Type :

N-Channel