TK31N60W,S1VF
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- Mfr.Part #
- TK31N60W,S1VF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N CH 600V 30.8A TO247
- Stock
- 6,877
- In Stock ：
- 6,877
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 8.5 ns
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Unknown
- Capacitance :
- 3nF
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.5mA
- RoHS Status :
- RoHS Compliant
- Published :
- 2013
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 165 ns
- Resistance :
- 88mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Mount :
- Through Hole
- FET Feature :
- Super Junction
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- Series :
- DTMOSIV
- Rise Time :
- 32ns
- Power Dissipation-Max :
- 230W Tc
- Continuous Drain Current (ID) :
- 30.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 15.4A, 10V
- Factory Lead Time :
- 16 Weeks
- Datasheets
- TK31N60W,S1VF
N-Channel Tube 88m Ω @ 15.4A, 10V ±30V 3000pF @ 300V 86nC @ 10V TO-247-3
TK31N60W,S1VF Overview
The maximum input capacitance of this device is 3000pF @ 300V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30.8A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 165 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
TK31N60W,S1VF Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 165 ns
TK31N60W,S1VF Applications
There are a lot of Toshiba Semiconductor and Storage
TK31N60W,S1VF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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