TK31N60X,S1F
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- Mfr.Part #
- TK31N60X,S1F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO247
- Stock
- 1,269
- In Stock ：
- 1,269
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Factory Lead Time :
- 16 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Channels :
- 1
- Operating Temperature :
- 150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Published :
- 2014
- Fall Time (Typ) :
- 6 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Weight :
- 38.000013g
- Power Dissipation-Max :
- 230W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Turn On Delay Time :
- 55 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Rise Time :
- 22ns
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 9.4A, 10V
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-247-3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- FET Feature :
- Super Junction
- Turn-Off Delay Time :
- 130 ns
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 30.8A
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.5mA
- Series :
- DTMOSIV-H
- Datasheets
- TK31N60X,S1F
N-Channel Tube 88m Ω @ 9.4A, 10V ±30V 3000pF @ 300V 65nC @ 10V 600V TO-247-3
TK31N60X,S1F Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3000pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30.8A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 130 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 55 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK31N60X,S1F Features
a continuous drain current (ID) of 30.8A
the turn-off delay time is 130 ns
a 600V drain to source voltage (Vdss)
TK31N60X,S1F Applications
There are a lot of Toshiba Semiconductor and Storage
TK31N60X,S1F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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