TK31A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Rise Time :

32ns

FET Feature :

Super Junction

Fall Time (Typ) :

8.5 ns

Current - Continuous Drain (Id) @ 25°C :

30.8A Ta

Max Operating Temperature :

150°C

Published :

2013

FET Type :

N-Channel

Supplier Device Package :

TO-220SIS

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

88mOhm @ 15.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

16 Weeks

Series :

DTMOSIV

Power Dissipation-Max :

45W Tc

Continuous Drain Current (ID) :

30.8A

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 300V

Turn-Off Delay Time :

165 ns

Drain to Source Breakdown Voltage :

600V

Capacitance :

3nF

Element Configuration :

Single

Rds On Max :

88 mΩ

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.7V @ 1.5mA

Min Operating Temperature :

-55°C

Mount :

Through Hole

Drain to Source Resistance :

73mOhm

RoHS Status :

RoHS Compliant

Power Dissipation :

45W

Packaging :

Tube

Input Capacitance :

3nF

Operating Temperature :

150°C TJ