TK31A60W,S4VX

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Drain to Source Resistance :

73mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Capacitance :

3nF

RoHS Status :

RoHS Compliant

Packaging :

Tube

FET Type :

N-Channel

Series :

DTMOSIV

Element Configuration :

Single

Mount :

Through Hole

Continuous Drain Current (ID) :

30.8A

Input Capacitance :

3nF

Rise Time :

32ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 300V

Power Dissipation-Max :

45W Tc

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

30.8A Ta

Supplier Device Package :

TO-220SIS

Turn-Off Delay Time :

165 ns

Drain to Source Breakdown Voltage :

600V

Published :

2013

Package / Case :

TO-220-3 Full Pack

Min Operating Temperature :

-55°C

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

600V

FET Feature :

Super Junction

Rds On Max :

88 mΩ

Rds On (Max) @ Id, Vgs :

88mOhm @ 15.4A, 10V

Fall Time (Typ) :

8.5 ns

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Max Operating Temperature :

150°C

Factory Lead Time :

16 Weeks

Power Dissipation :

45W