TK31E60W,S1VX
- Mfr.Part #
- TK31E60W,S1VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30.8A TO220
- Stock
- 6,203
- In Stock :
- 6,203
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 300V
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 230W Tc
- FET Feature :
- Super Junction
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 88m Ω @ 15.4A, 10V
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.5mA
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 30.8A
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 165 ns
- Power Dissipation :
- 230W
- Package / Case :
- TO-220-3
- Series :
- DTMOSIV
- Drain to Source Breakdown Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- 150°C TJ
- Rise Time :
- 32ns
- Fall Time (Typ) :
- 8.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A Ta
- Vgs (Max) :
- ±30V
- Datasheets
- TK31E60W,S1VX

N-Channel Tube 88m Ω @ 15.4A, 10V ±30V 3000pF @ 300V 86nC @ 10V TO-220-3
TK31E60W,S1VX Overview
A device's maximum input capacitance is 3000pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 165 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK31E60W,S1VX Features
a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 165 ns
TK31E60W,S1VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK31E60W,S1VX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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