TK31E60W,S1VX

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Mfr.Part #
TK31E60W,S1VX
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 30.8A TO220
Stock
6,203
In Stock :
6,203

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
230W Tc
FET Feature :
Super Junction
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
88m Ω @ 15.4A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 1.5mA
Packaging :
Tube
Continuous Drain Current (ID) :
30.8A
FET Type :
N-Channel
Mounting Type :
Through Hole
Factory Lead Time :
16 Weeks
Turn-Off Delay Time :
165 ns
Power Dissipation :
230W
Package / Case :
TO-220-3
Series :
DTMOSIV
Drain to Source Breakdown Voltage :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
150°C TJ
Rise Time :
32ns
Fall Time (Typ) :
8.5 ns
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Element Configuration :
Single
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
30.8A Ta
Vgs (Max) :
±30V
Datasheets
TK31E60W,S1VX
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK31E60W,S1VX from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, TK31E60W,S1VX pinout, TK31E60W,S1VX datasheet PDF, TK31E60W,S1VX amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK31E60W,S1VX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK31E60W,S1VX


N-Channel Tube 88m Ω @ 15.4A, 10V ±30V 3000pF @ 300V 86nC @ 10V TO-220-3

TK31E60W,S1VX Overview


A device's maximum input capacitance is 3000pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30.8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 165 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

TK31E60W,S1VX Features


a continuous drain current (ID) of 30.8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 165 ns


TK31E60W,S1VX Applications


There are a lot of Toshiba Semiconductor and Storage
TK31E60W,S1VX applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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