TK12V60W,LVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Number of Pins :

5

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

600V

Published :

2015

Min Operating Temperature :

-55°C

Rise Time :

23ns

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

300mOhm @ 5.8A, 10V

Supplier Device Package :

4-DFN-EP (8x8)

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

FET Feature :

Super Junction

Power Dissipation-Max :

104W Tc

Continuous Drain Current (ID) :

11.5A

Vgs(th) (Max) @ Id :

3.7V @ 600µA

Operating Temperature :

150°C TJ

Input Capacitance :

890pF

Rds On Max :

300 mΩ

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 300V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

85 ns

Series :

DTMOSIV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Vgs (Max) :

±30V

Drain to Source Resistance :

300mOhm

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Fall Time (Typ) :

5.5 ns

Package / Case :

4-VSFN Exposed Pad

Turn On Delay Time :

45 ns

Factory Lead Time :

16 Weeks

FET Type :

N-Channel