TK12A60U(Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

Published :

2009

Number of Pins :

3

Vgs (Max) :

±30V

FET Type :

N-Channel

Drain to Source Resistance :

400mOhm

Operating Temperature :

150°C TJ

Series :

DTMOSII

Fall Time (Typ) :

8 ns

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Element Configuration :

Single

Continuous Drain Current (ID) :

12A

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

35W Tc

Packaging :

Tube

Supplier Device Package :

TO-220SIS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Rds On (Max) @ Id, Vgs :

400mOhm @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Input Capacitance :

720pF

Rise Time :

30ns

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 10V

Rds On Max :

400 mΩ

Power Dissipation :

35W

RoHS Status :

RoHS Compliant

Factory Lead Time :

12 Weeks

Radiation Hardening :

No