TK12E80W,S1X
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- Mfr.Part #
- TK12E80W,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 11.5A TO220
- Stock
- 3,208
- In Stock ：
- 3,208
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 570μA
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 300V
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Power Dissipation-Max :
- 165W Tc
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 800V
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 5.8A, 10V
- Series :
- DTMOSIV
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Datasheets
- TK12E80W,S1X
N-Channel Tube 450mOhm @ 5.8A, 10V ±20V 1400pF @ 300V 23nC @ 10V 800V TO-220-3
TK12E80W,S1X Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1400pF @ 300V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK12E80W,S1X Features
a 800V drain to source voltage (Vdss)
TK12E80W,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK12E80W,S1X applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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