TK12A45D(STA4,Q,M)

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Mfr.Part #
TK12A45D(STA4,Q,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 450V 12A TO220SIS
Stock
32,456
In Stock :
32,456

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Factory Lead Time :
16 Weeks
Number of Pins :
3
Series :
π-MOSVII
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
RoHS Compliant
Continuous Drain Current (ID) :
12A
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Operating Temperature :
150°C TJ
Published :
2009
Current - Continuous Drain (Id) @ 25°C :
12A Ta
Power Dissipation-Max :
45W Tc
Package / Case :
TO-220-3 Full Pack
Fall Time (Typ) :
12 ns
Mounting Type :
Through Hole
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Drain to Source Voltage (Vdss) :
450V
FET Type :
N-Channel
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
520m Ω @ 6A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±30V
Rise Time :
25ns
Vgs(th) (Max) @ Id :
4V @ 1mA
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK12A45D(STA4,Q,M) from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, TK12A45D(STA4,Q,M) pinout, TK12A45D(STA4,Q,M) datasheet PDF, TK12A45D(STA4,Q,M) amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK12A45D(STA4,Q,M) ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK12A45D(STA4,Q,M)


N-Channel Tube 520m Ω @ 6A, 10V ±30V 1200pF @ 25V 24nC @ 10V 450V TO-220-3 Full Pack

TK12A45D(STA4,Q,M) Overview


A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 450V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK12A45D(STA4,Q,M) Features


a continuous drain current (ID) of 12A
a 450V drain to source voltage (Vdss)


TK12A45D(STA4,Q,M) Applications


There are a lot of Toshiba Semiconductor and Storage
TK12A45D(STA4,Q,M) applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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