TK12E60W,S1VX
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- Mfr.Part #
- TK12E60W,S1VX
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 600V 11.5A TO-220
- Stock
- 10,585
- In Stock ：
- 10,585
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Factory Lead Time :
- 16 Weeks
- Number of Elements :
- 1
- Series :
- DTMOSIV
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 300V
- Drain to Source Breakdown Voltage :
- 600V
- FET Feature :
- Super Junction
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Power Dissipation :
- 110W
- Continuous Drain Current (ID) :
- 11.5A
- Power Dissipation-Max :
- 110W Tc
- Vgs(th) (Max) @ Id :
- 3.7V @ 600µA
- Fall Time (Typ) :
- 5.5 ns
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Published :
- 2013
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 5.8A, 10V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 23ns
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 85 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- Datasheets
- TK12E60W,S1VX
N-Channel Tube 300m Ω @ 5.8A, 10V ±30V 890pF @ 300V 25nC @ 10V TO-220-3
TK12E60W,S1VX Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 890pF @ 300V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK12E60W,S1VX Features
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
TK12E60W,S1VX Applications
There are a lot of Toshiba Semiconductor and Storage
TK12E60W,S1VX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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