TK12A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance :

1.8nF

Operating Temperature :

150°C TJ

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Mounting Type :

Through Hole

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Drain to Source Voltage (Vdss) :

600V

Published :

2009

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

550mOhm @ 6A, 10V

Min Operating Temperature :

-55°C

Number of Pins :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mount :

Through Hole

Rise Time :

40ns

Series :

π-MOSVII

Factory Lead Time :

16 Weeks

Supplier Device Package :

TO-220SIS

RoHS Status :

RoHS Compliant

Rds On Max :

550 mΩ