TK12A60W,S4VX

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Mfr.Part #
TK12A60W,S4VX
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 11.5A TO220SIS
Stock
13,588
In Stock :
13,588

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Power Dissipation :
35W
Rise Time :
23ns
FET Feature :
Super Junction
Fall Time (Typ) :
5.5 ns
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 300V
Drain to Source Breakdown Voltage :
600V
Capacitance :
890pF
Factory Lead Time :
16 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
85 ns
Operating Temperature :
150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Package / Case :
TO-220-3 Full Pack
Power Dissipation-Max :
35W Tc
Packaging :
Tube
Vgs (Max) :
±30V
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Published :
2013
Continuous Drain Current (ID) :
11.5A
RoHS Status :
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C :
11.5A Ta
Rds On (Max) @ Id, Vgs :
300m Ω @ 5.8A, 10V
Series :
DTMOSIV
Vgs(th) (Max) @ Id :
3.7V @ 600µA
Datasheets
TK12A60W,S4VX
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK12A60W,S4VX from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3 Full Pack, Mounting Type:Through Hole, TK12A60W,S4VX pinout, TK12A60W,S4VX datasheet PDF, TK12A60W,S4VX amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK12A60W,S4VX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK12A60W,S4VX


N-Channel Tube 300m Ω @ 5.8A, 10V ±30V 890pF @ 300V 25nC @ 10V TO-220-3 Full Pack

TK12A60W,S4VX Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 890pF @ 300V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [85 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

TK12A60W,S4VX Features


a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns


TK12A60W,S4VX Applications


There are a lot of Toshiba Semiconductor and Storage
TK12A60W,S4VX applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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