TK12A53D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

Series :

π-MOSVII

Rds On (Max) @ Id, Vgs :

580m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

12A

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

525V

Rise Time :

22ns

Radiation Hardening :

No

Vgs (Max) :

±30V

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

45W Tc

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Pins :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

12A Ta

FET Type :

N-Channel

Mounting Type :

Through Hole