TK12Q60W,S1VQ
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- Mfr.Part #
- TK12Q60W,S1VQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-251-3 Stub Leads, IPak
- Datasheet
- Download
- Description
- MOSFET N CH 600V 11.5A IPAK
- Stock
- 8,438
- In Stock ：
- 8,438
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 85 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A Ta
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 5.8A, 10V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 5.5 ns
- Published :
- 2013
- Capacitance :
- 890pF
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 11.5A
- Rise Time :
- 23ns
- Resistance :
- 340mOhm
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Operating Temperature :
- 150°C TJ
- Series :
- DTMOSIV
- Vgs(th) (Max) @ Id :
- 3.7V @ 600µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 300V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 100W Tc
- FET Feature :
- Super Junction
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-251-3 Stub Leads, IPak
- Datasheets
- TK12Q60W,S1VQ
N-Channel Tube 340m Ω @ 5.8A, 10V ±30V 890pF @ 300V 25nC @ 10V TO-251-3 Stub Leads, IPak
TK12Q60W,S1VQ Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 890pF @ 300V.This device conducts a continuous drain current (ID) of 11.5A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK12Q60W,S1VQ Features
a continuous drain current (ID) of 11.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 85 ns
TK12Q60W,S1VQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK12Q60W,S1VQ applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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