TK12P60W,RVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

85 ns

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Power Dissipation-Max :

100W Tc

Rise Time :

23ns

Rds On Max :

340 mΩ

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

340mOhm @ 5.8A, 10V

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

DTMOSIV

Supplier Device Package :

DPAK

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

3.7V @ 600µA

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

11.5A

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 300V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

5.5 ns

Input Capacitance :

890pF

Mounting Type :

Surface Mount

Drain to Source Resistance :

340mOhm

FET Feature :

Super Junction