TK10V60W,LVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Turn On Delay Time :

45 ns

Rds On Max :

380 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 300V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

88.3W Tc

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta

Package / Case :

4-VSFN Exposed Pad

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

9.7A

Supplier Device Package :

4-DFN-EP (8x8)

Min Operating Temperature :

-55°C

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

380mOhm @ 4.9A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

600V

Mount :

Surface Mount

Drain to Source Resistance :

380mOhm

Max Operating Temperature :

150°C

FET Type :

N-Channel

Number of Pins :

5

FET Feature :

Super Junction

Fall Time (Typ) :

5.5 ns

Turn-Off Delay Time :

75 ns

Drain to Source Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±30V

Input Capacitance :

700pF

Vgs(th) (Max) @ Id :

3.7V @ 500μA

Rise Time :

22ns

Series :

DTMOSIV