TK10A60D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

600V

Mount :

Through Hole

Mounting Type :

Through Hole

Element Configuration :

Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Series :

π-MOSVII

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Input Capacitance :

1.35nF

Continuous Drain Current (ID) :

10A

Rds On Max :

750 mΩ

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 25V

Min Operating Temperature :

-55°C

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

100 ns

Drain to Source Resistance :

750mOhm

Rds On (Max) @ Id, Vgs :

750mOhm @ 5A, 10V

Supplier Device Package :

TO-220SIS

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

10A Ta

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

45W Tc

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

15 ns

Rise Time :

55ns