TK100S04N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

2.3 mΩ

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 50A, 10V

Series :

U-MOSVIII-H

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

DPAK+

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

19 ns

Input Capacitance (Ciss) (Max) @ Vds :

5490pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

175°C TJ

Element Configuration :

Single

Power Dissipation-Max :

100W Tc

Mounting Type :

Surface Mount

Input Capacitance :

5.49nF

Turn-Off Delay Time :

80 ns

Number of Channels :

1

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015

Drain to Source Breakdown Voltage :

40V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2.5V @ 500μA

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

100A Ta

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

76nC @ 10V

FET Type :

N-Channel

Turn On Delay Time :

23 ns

Factory Lead Time :

12 Weeks

Weight :

3.949996g

Drain to Source Voltage (Vdss) :

40V

Continuous Drain Current (ID) :

100A

Drain to Source Resistance :

1.9mOhm

Rise Time :

8ns

Min Operating Temperature :

-55°C