TK100E08N1,S1X

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Mfr.Part #
TK100E08N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 80V 100A TO220
Stock
8,253
In Stock :
8,253

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
U-MOSVIII-H
Packaging :
Tube
Operating Temperature :
150°C TJ
Power Dissipation-Max :
255W Tc
RoHS Status :
RoHS Compliant
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
100A Ta
Capacitance :
9nF
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 40V
Vgs(th) (Max) @ Id :
4V @ 1mA
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 50A, 10V
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
80V
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Factory Lead Time :
12 Weeks
Continuous Drain Current (ID) :
100A
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2014
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
TK100E08N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK100E08N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, TK100E08N1,S1X pinout, TK100E08N1,S1X datasheet PDF, TK100E08N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK100E08N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK100E08N1,S1X


N-Channel Tube 3.2m Ω @ 50A, 10V ±20V 9000pF @ 40V 130nC @ 10V 80V TO-220-3

TK100E08N1,S1X Overview


A device's maximal input capacitance is 9000pF @ 40V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.This transistor requires a 80V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK100E08N1,S1X Features


a continuous drain current (ID) of 100A
a 80V drain to source voltage (Vdss)


TK100E08N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK100E08N1,S1X applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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