TK100A06N1,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Series :

U-MOSVIII-H

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Power Dissipation-Max :

45W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

10.5nF

Moisture Sensitivity Level (MSL) :

Not Applicable

Published :

2014

Max Operating Temperature :

150°C

Element Configuration :

Single

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Rise Time :

67ns

Supplier Device Package :

TO-220SIS

Operating Temperature :

150°C TJ

Turn On Delay Time :

110 ns

Continuous Drain Current (ID) :

100A

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

180 ns

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

2.7mOhm @ 50A, 10V

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Drain to Source Resistance :

2.2MOhm

Number of Channels :

1

Rds On Max :

2.7 mΩ

Fall Time (Typ) :

64 ns

Number of Pins :

3

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 30V