TK10A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Operating Temperature :

150°C TJ

Supplier Device Package :

TO-220SIS

RoHS Status :

RoHS Compliant

Rds On Max :

720 mΩ

Power Dissipation-Max :

45W Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

720mOhm @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance :

1.2nF

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

10A

Fall Time (Typ) :

12 ns

Drain to Source Voltage (Vdss) :

550V

Radiation Hardening :

No

Number of Pins :

3

Rise Time :

25ns

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

π-MOSVII

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel