TK100E06N1,S1X

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Mfr.Part #
TK100E06N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N CH 60V 100A TO-220
Stock
1,967
In Stock :
1,967

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2006
Current - Continuous Drain (Id) @ 25°C :
100A Ta
Mounting Type :
Through Hole
Factory Lead Time :
12 Weeks
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
255W Tc
Vgs (Max) :
±20V
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 1mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
60V
Series :
U-MOSVIII-H
Rds On (Max) @ Id, Vgs :
2.3m Ω @ 50A, 10V
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 30V
Mount :
Through Hole
Package / Case :
TO-220-3
Continuous Drain Current (ID) :
100A
Operating Temperature :
150°C TJ
Datasheets
TK100E06N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK100E06N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:150°C TJ, TK100E06N1,S1X pinout, TK100E06N1,S1X datasheet PDF, TK100E06N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK100E06N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK100E06N1,S1X


N-Channel Tube 2.3m Ω @ 50A, 10V ±20V 10500pF @ 30V 140nC @ 10V 60V TO-220-3

TK100E06N1,S1X Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 10500pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TK100E06N1,S1X Features


a continuous drain current (ID) of 100A
a 60V drain to source voltage (Vdss)


TK100E06N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK100E06N1,S1X applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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