TK10A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Rise Time :

25ns

Power Dissipation-Max :

45W Tc

Number of Pins :

3

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

720 mΩ

Vgs(th) (Max) @ Id :

4V @ 1mA

Continuous Drain Current (ID) :

10A

Max Operating Temperature :

150°C

Factory Lead Time :

16 Weeks

Power Dissipation :

45W

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Drain to Source Resistance :

620mOhm

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

TO-220SIS

Turn-Off Delay Time :

75 ns

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Series :

π-MOSVII

Published :

2009

Rds On (Max) @ Id, Vgs :

720mOhm @ 5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Mounting Type :

Through Hole

Input Capacitance :

1.05nF

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

500V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Elements :

1