TK10A50D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

π-MOSVII

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Operating Temperature :

150°C TJ

Power Dissipation-Max :

45W Tc

Factory Lead Time :

16 Weeks

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

10 ns

Vgs (Max) :

±30V

Rise Time :

25ns

Input Capacitance :

1.05nF

Continuous Drain Current (ID) :

10A

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

720mOhm @ 5A, 10V

Published :

2009

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

45W

Rds On Max :

720 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Supplier Device Package :

TO-220SIS

Drain to Source Resistance :

620mOhm

Mount :

Through Hole

Turn-Off Delay Time :

75 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V