TK10S04K3L(T6L1,NQ
- Mfr.Part #
- TK10S04K3L(T6L1,NQ
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 10A DPAK
- Stock
- 9,052
- In Stock :
- 9,052
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On Max :
- 28 mΩ
- Series :
- U-MOSIV
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 10V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 25W Tc
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 4 ns
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 5A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 410pF
- Continuous Drain Current (ID) :
- 10A
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 40V
- Supplier Device Package :
- DPAK+
- Operating Temperature :
- 175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Published :
- 2009
- Rise Time :
- 7ns
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- FET Type :
- N-Channel
- Datasheets
- TK10S04K3L(T6L1,NQ

N-Channel Tape & Reel (TR) 28mOhm @ 5A, 10V ±20V 410pF @ 10V 10nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
TK10S04K3L(T6L1,NQ Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 410pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
TK10S04K3L(T6L1,NQ Features
a continuous drain current (ID) of 10A
a 40V drain to source voltage (Vdss)
TK10S04K3L(T6L1,NQ Applications
There are a lot of Toshiba Semiconductor and Storage
TK10S04K3L(T6L1,NQ applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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