TK10Q60W,S1VQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

Not Applicable

Series :

DTMOSIV

Published :

2013

Input Capacitance :

700pF

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Supplier Device Package :

I-PAK

Mount :

Through Hole

Package / Case :

TO-251-3 Stub Leads, IPak

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Turn On Delay Time :

45 ns

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

75 ns

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 300V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±30V

Packaging :

Tube

Continuous Drain Current (ID) :

9.7A

Power Dissipation-Max :

80W Tc

Min Operating Temperature :

-55°C

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Fall Time (Typ) :

5.5 ns

Vgs(th) (Max) @ Id :

3.7V @ 500μA

FET Type :

N-Channel

Element Configuration :

Single

Rds On Max :

430 mΩ

Rds On (Max) @ Id, Vgs :

430mOhm @ 4.9A, 10V

Number of Pins :

3

Drain to Source Resistance :

327mOhm

Weight :

3.949996g

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

600V

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta

Drain to Source Voltage (Vdss) :

600V

Max Operating Temperature :

150°C