TK10J80E,S1E

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-3P(N)

Drain to Source Resistance :

700mOhm

Rise Time :

40ns

Element Configuration :

Single

Turn On Delay Time :

80 ns

Published :

2014

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

1Ohm @ 5A, 10V

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Series :

π-MOSVIII

Continuous Drain Current (ID) :

10A

Mount :

Through Hole

Turn-Off Delay Time :

140 ns

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Power Dissipation-Max :

250W Tc

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-3P-3, SC-65-3

Min Operating Temperature :

-55°C

Weight :

6.961991g

Factory Lead Time :

16 Weeks

Input Capacitance :

2nF

Packaging :

Tube

Fall Time (Typ) :

35 ns

Moisture Sensitivity Level (MSL) :

Not Applicable

Rds On Max :

1 Ω