TK10E80W,S1X

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Mfr.Part #
TK10E80W,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
PB-F POWER MOSFET TRANSISTOR TO-
Stock
50
In Stock :
50

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Drive Voltage (Max Rds On, Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 450μA
Operating Temperature :
150°C
Configuration :
Single
Drain to Source Voltage (Vdss) :
800 V
Product Type :
MOSFET
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
550mOhm @ 4.8A, 10V
Vgs (Max) :
±20V
Tradename :
DTMOSVI
Series :
DTMOSIV
Package / Case :
TO-220-3
Rise Time :
35 ns
Package :
Tube
Manufacturer :
Toshiba
Supplier Device Package :
TO-220
Transistor Polarity :
N-Channel
Subcategory :
MOSFETs
Product Category :
MOSFET
Power Dissipation (Max) :
130W (Tc)
Channel Mode :
Enhancement
Mounting Type :
Through Hole
FET Feature :
-
Maximum Operating Temperature :
+ 150 C
Packaging :
Tube
Product Status :
Active
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
9.5A (Ta)
Brand :
Toshiba
Gate Charge (Qg) (Max) @ Vgs :
19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1150 pF @ 300 V
RoHS :
Details
Transistor Type :
1 N-Channel
Datasheets
TK10E80W,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK10E80W,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C, Number of Channels:1 Channel, Package / Case:TO-220-3, Mounting Type:Through Hole, TK10E80W,S1X pinout, TK10E80W,S1X datasheet PDF, TK10E80W,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK10E80W,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 550mOhm @ 4.8A, 10V ±20V 1150 pF @ 300 V 19 nC @ 10 V 800 V TO-220-3

TK10E80W,S1X Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1150 pF @ 300 V is its maximum input capacitance.For this transistor to work, a voltage 800 V is required between drain and source (Vdss).

TK10E80W,S1X Features


a 800 V drain to source voltage (Vdss)


TK10E80W,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK10E80W,S1X applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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