TK10E80W,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

DTMOSIV

Rds On (Max) @ Id, Vgs :

550mOhm @ 4.8A, 10V

Channel Mode :

Enhancement

Drive Voltage (Max Rds On, Min Rds On) :

10V

Operating Temperature :

150°C

Product Status :

Active

Package / Case :

TO-220-3

Packaging :

Tube

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

9.5A (Ta)

Rise Time :

35 ns

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1150 pF @ 300 V

Power Dissipation (Max) :

130W (Tc)

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

FET Feature :

-

Product Type :

MOSFET

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

800 V

Minimum Operating Temperature :

- 55 C

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 10 V

Supplier Device Package :

TO-220

Brand :

Toshiba

Tradename :

DTMOSVI

Configuration :

Single

Product Category :

MOSFET

Number of Channels :

1 Channel

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

4V @ 450μA

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Manufacturer :

Toshiba