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    TK10E60W,S1VX

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    Mfr.Part #
    TK10E60W,S1VX
    Manufacturer
    Toshiba Electronic Devices and Storage Corporation
    Package / Case
    TO-220-3
    Datasheet
    Download
    Description
    MOSFET N-CH 600V 9.7A TO220
    Stock
    12,868
    In Stock ：
    12,868

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    Manufacturer :
    Toshiba Electronic Devices and Storage Corporation
    Product Category :
    Transistors - FETs, MOSFETs - Single
    Turn-Off Delay Time :
    75 ns
    Rds On (Max) @ Id, Vgs :
    380m Ω @ 4.9A, 10V
    Power Dissipation :
    100W
    Operating Temperature :
    150°C TJ
    Drain to Source Breakdown Voltage :
    600V
    Gate to Source Voltage (Vgs) :
    30V
    Moisture Sensitivity Level (MSL) :
    Not Applicable
    Gate Charge (Qg) (Max) @ Vgs :
    20nC @ 10V
    Continuous Drain Current (ID) :
    9.7A
    Drive Voltage (Max Rds On,Min Rds On) :
    10V
    Published :
    2012
    RoHS Status :
    RoHS Compliant
    Packaging :
    Tube
    Vgs(th) (Max) @ Id :
    3.7V @ 500μA
    FET Feature :
    Super Junction
    Power Dissipation-Max :
    100W Tc
    Rise Time :
    22ns
    Factory Lead Time :
    16 Weeks
    Series :
    DTMOSIV
    Fall Time (Typ) :
    5.5 ns
    Vgs (Max) :
    ±30V
    Package / Case :
    TO-220-3
    Current - Continuous Drain (Id) @ 25°C :
    9.7A Ta
    FET Type :
    N-Channel
    Element Configuration :
    Single
    Mount :
    Through Hole
    Input Capacitance (Ciss) (Max) @ Vds :
    700pF @ 300V
    Mounting Type :
    Through Hole
    Datasheets
    TK10E60W,S1VX
    Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK10E60W,S1VX from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature：150°C TJ, Package / Case：TO-220-3, Mounting Type：Through Hole, TK10E60W,S1VX pinout, TK10E60W,S1VX datasheet PDF, TK10E60W,S1VX amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK10E60W,S1VX ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

    Toshiba Electronic Devices and Storage Corporation TK10E60W,S1VX


    N-Channel Tube 380m Ω @ 4.9A, 10V ±30V 700pF @ 300V 20nC @ 10V TO-220-3

    TK10E60W,S1VX Overview


    With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 700pF @ 300V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 9.7A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 75 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

    TK10E60W,S1VX Features


    a continuous drain current (ID) of 9.7A
    a drain-to-source breakdown voltage of 600V voltage
    the turn-off delay time is 75 ns


    TK10E60W,S1VX Applications


    There are a lot of Toshiba Semiconductor and Storage
    TK10E60W,S1VX applications of single MOSFETs transistors.


    • Lighting
    • Uninterruptible Power Supply
    • AC-DC Power Supply
    • Synchronous Rectification for ATX 1 Server I Telecom PSU
    • Motor drives and Uninterruptible Power Supplies
    • Micro Solar Inverter
    • DC/DC converters
    • Power Tools
    • Motor Drives and Uninterruptible Power Supples
    • Synchronous Rectification
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